About

Faculty Directory

Rui Yang
Associate Professor, JI Associate Professor, SEIEE
Office	434
Tel	+86-21-34206765 Ext. 4341
Email	rui.yang@sjtu.edu.cn
Webpage	https://sites.ji.sjtu.edu.cn/rui-yang/

Education

Ph.D.	Electrical Engineering, Case Western Reserve University, Ohio, USA (2016)
B.E.	Electrical Engineering, Tianjin University, Tianjin, China (2011)

Work Experience

2022 – pres.	Associate Professor of Electrical Engineering, UM-SJTU Joint Institute, Shanghai Jiao Tong University
2018 – 2022	Assistant Professor of Electrical Engineering, UM-SJTU Joint Institute, Shanghai Jiao Tong University
2016 – 2018	Postdoctoral Scholar, Electrical Engineering, Stanford University

Honors and Awards

2019 Forbes China “30 Under 30” Award in Science Category (one of the 30 awardees in China).
2019 “Rising Star Junior Faculty Award” (one of the 10 awardees in China), Organized by China Association for Science and Technology.
“Young Scientist Award” in Microsystems & Nanoengineering Summit 2019 (MINE’2019, one of the 6 awardees in China).
Shanghai Yang Fan Talent Program, Science and Technology Commission of Shanghai Municipality (2019)
Ruth Barber Moon Award, Case Western Reserve University (2015)

Research Interests

In-memory computing using resistive random-access memories (RRAMs)
Resonant nanoelectromechanical systems (NEMS) for sensing, computing, and RF signal processing
Flexible electronic devices based on 2D materials

Selected Publications

(†Equal Contribution, *Corresponding Author)

Xu, P. Zhang, J. Zhu, Z. Liu, A. Eichler, X.-Q. Zheng, J. Lee, A. Dash, S. More, S. Wu, Y. Wang, H. Jia, A. Naik*, A. Bachtold, R. Yang*, P. X.-L. Feng*, Z. Wang*, “Nanomechanical Resonators: Toward Atomic Scale”, ACS Nano 16, 15545–15585 (2022).
R. Yang*, S M E. H. Yousuf, J. Lee, P. Zhang, Z. Liu, P. X.-L. Feng*, “Raman Spectroscopic Probe for Nonlinear MoS₂ Nanoelectromechanical Resonators”, Nano Letters 22, 5780-5787 (2022).
Zhang, Y. Jia, M. Xie, Z. Liu, S. Shen, J. Wei, R. Yang*, “Strain-Modulated Dissipation in Two-Dimensional Molybdenum Disulfide Nanoelectromechanical Resonators”, ACS Nano 16, 2261-2270 (2022)
R. Yang, “In-Memory Computing with Ferroelectrics”, Nature Electronics 3, 237–238 (2020). (Invited News & Views Article)
I. Evans†, R. Yang†, L. T. Gan†, M. Abbasi, X. Wang, R. Traylor, J. A. Fan, D. Natelson, “Thermoelectric Response from Grain Boundaries and Lattice Distortions in Crystalline Gold Devices”, Proceedings of the National Academy of Sciences of the United States of America (PNAS) 117, 23350-23355 (2020).
R. Yang*, H. Li, K. K. H. Smithe, T. R. Kim, K. Okabe, E. Pop, J. A. Fan, H.-S. P. Wong, “Ternary Content-Addressable Memory with MoS₂ Transistors for Massively Parallel Data Search”, Nature Electronics 2, 108-114 (2019).
T. Gan†, R. Yang†, R. Traylor, W. Cai, W. D. Nix, J. A. Fan, “High-Throughput Growth of Microscale Gold Bicrystals for Single-Grain-Boundary Studies”, Advanced Materials, 1902189 (2019). DOI: 10.1002/adma.201902189.
R. Yang, J. Lee, S. Ghosh, H. Tang, R. M. Sankaran, C. A. Zorman, P. X.-L. Feng, “Tuning Optical Signatures of Single-and Few-Layer MoS₂ by Blown-Bubble Bulge Straining up to Fracture”, Nano Letters 17, 4568-4575 (2017).
R. Yang, H. Li, K. K. H. Smithe, T. R. Kim, K. Okabe, E. Pop, J. A. Fan, H.-S. P. Wong, “2D Molybdenum Disulfide (MoS₂) Transistors Driving RRAMs with 1T1R Configuration”, Int. Electron Devices Meeting (IEDM), 477-480, San Francisco, Dec. 2-6 (2017). Featured by IEEE Spectrum
R. Yang, C. Chen, J. Lee, D. A. Czaplewski, P. X.-L. Feng, “Local-Gate Electrical Actuation, Detection, and Tuning of Atomic-Layer MoS₂ Nanoelectromechanical Resonators”, in 30th IEEE Int. Conf. on Micro Electro Mechanical Systems (MEMS 2017), 163-166, Las Vegas, Jan. 22-26 (2017) (+talk, selection rate 10%).
R. Yang, A. Islam, P. X.-L. Feng, “Electromechanical Coupling and Design Considerations in Single-Layer MoS₂ Suspended-Channel Transistors and Resonators”, Nanoscale 7, 19921-19929 (2015).
R. Yang, T. He, M. A. Tupta, C. Marcoux, P. Andreucci, L. Duraffourg, P. X.-L. Feng, “Probing Contact-Mode Characteristics of Silicon Nanowire Electromechanical Systems with Embedded Piezoresistive Transducers”, Journal of Micromechanics and Microengineering 25, 095014 (2015). Featured as Cover Article
R. Yang†, X. Zheng†, Z. Wang, P. X.-L. Feng, “Multilayer MoS₂ Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing”, Journal of Vacuum Science and Technology B 32, 061203 (2014). †Equal Contribution. Featured as Cover Article, Editor’s Pick and Most Read Article

Professional Service

Editorial Board Member of Journal: Microsystems & Nanoengineering
Reviews Editor of Journal: Nanotechnology
Associate Editor of Journal: Micro & Nano Letters
Invited speaker in a number of conferences, including IEEE NEMS 2021, ICON-2DMAT 2019, CSMNT 2019, ICMAN 2018, IEMS-2018, The Second Symposium on Advanced 2D Materials and Devices, and multiple university seminars.